Product Summary

The SI4800BDY-T1-E3 is an N-Channel Reduced Qg, Fast Switching MOSFET.

Parametrics

SI4800BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±25V; (3)Continuous Drain Current (TJ = 150 ℃) ID: 9A; (4)Pulsed Drain Current (10 μs Pulse Width) IDM: 40A; (5)Continuous Source Current (Diode Conduction) IS: 2.3A; (6)Avalanche Current IAS: 15A; (7)Single-Pulse Avalanche Energy EAS: 11.25 mJ; (8)Maximum Power Dissipation PD: 2.5W; (9)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃.

Features

SI4800BDY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFET; (3)High-Efficient PWM Optimized; (4)100 % UIS and Rg Tested.

Diagrams

Si4800B pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4800BDY-T1-E3
SI4800BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
0-1: $0.46
1-25: $0.35
25-50: $0.33
50-100: $0.31
SI4800BDY-T1-GE3
SI4800BDY-T1-GE3
Vishay/Siliconix
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
Data Sheet
0-1: $0.44
1-10: $0.31
10-50: $0.31
50-100: $0.30